Located in PRB 1119
- State-of-the-art deposition tool for synthesizing high quality poly crystalline and single crystal diamond films for research and production
- The system is available with process gases: H2, CH4, O2 and N2
- Substrate heating up to 900° C
- Capability for biased substrate nucleation growth
Polycrystalline diamond growth:
A.
B.
a)-b) SEM images of polycrystalline diamond films grown at different substrate biases demonstrating control over nucleation process by controlling bias voltage. From: Dr. C. Marginean
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